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Silicon carbide shafts
parameters1：EG-1：The reaction-bonded silicon carbide RBSIC
parameters2：EG-2：Pressureless sintered silicon carbide SSIC
parameters3：EG-3：SIC with 5 - 30% graphite content
parameters2：EG-2：Pressureless sintered silicon carbide SSIC
parameters3：EG-3：SIC with 5 - 30% graphite content
SSIC: Sic purity(%)≥98, Density(g/cm3)≥ 3.1，Hardness≥HV2300，Heat temperature (in atmosphere)≥1600℃.
RSIC: Sic purity(%)≥90, Density(g/cm3)≥ 3.06，Hardness≥HV1700，Heat temperature (in atmosphere)≥1400℃.
SIC with 30% graphite content: Density(g/cm3)≥ 2.65，Hardness≥HV1600，Heat temperature (in atmosphere)≤1600℃.
RSIC: Sic purity(%)≥90, Density(g/cm3)≥ 3.06，Hardness≥HV1700，Heat temperature (in atmosphere)≥1400℃.
SIC with 30% graphite content: Density(g/cm3)≥ 2.65，Hardness≥HV1600，Heat temperature (in atmosphere)≤1600℃.
Silicon carbide shafts
SSIC: Sic purity(%)≥98, Density(g/cm3)≥ 3.1，Hardness≥HV2300，Heat temperature (in atmosphere)≥1600℃.
RSIC: Sic purity(%)≥90, Density(g/cm3)≥ 3.06，Hardness≥HV1700，Heat temperature (in atmosphere)≥1400℃.
SIC with 30% graphite content: Density(g/cm3)≥ 2.65，Hardness≥HV1600，Heat temperature (in atmosphere)≤1600℃.
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